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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367 DESCRIPTION With TO-220F package Complement to type 2SD2059 Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A Collector power dissipation: PC=30W(TC=25ae ) APPLICATIONS With general purpose applications PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg HAN C PARAMETER Fig.1 simplified outline (TO-220F) and symbol IN Collector-base voltage SEM GE Open base CONDITIONS OND IC TOR UC VALUE -100 -100 -5 -5 -0.5 UNIT V V V A A W ae ae Open emitter Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature Open collector TC=25ae 30 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 40 20 MIN -100 2SB1367 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -2.0 -1.5 -0.1 -1.0 240 V V mA mA hFE-1 Classifications R 40-80 O 70-140 Y 120-240 Collector output capacitance 5.0 MHz pF HAN INC SEM GE OND IC TOR UC 270 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1367 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1367 SEM GE HAN INC OND IC TOR UC 4 |
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